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BSL308C optimos? p3 + optimos? 2 small signal transistor features complementary p + n channel enhancement mode logic level (4.5v rated) avalanche rated qualified according to aec q101 100% lead-free; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified 1) parameter symbol conditions unit pn continuous drain current i d t a =25 c -2.0 2.3 a t a =70 c -1.6 1.8 pulsed drain current i d,pulse t a =25 c -8.0 9 avalanche energy, single pulse e as p: i d =-2.0 a, n: i d =2.3 a, r gs =25 ? 10.7 10.8 mj gate source voltage v gs v power dissipation 2) p tot t a =25 c w operating and storage temperature t j , t stg c esd class jesd22-a114-hbm soldering temperature t solder c iec climatic category; din iec 68-1 value -55 ... 150 55/150/56 260 20 0.5 1) remark: only one of both transistors active class 0 (<250v) pg-tsop-6 type package tape and reel information marking lead free packing BSL308C pg-tsop-6 l6327: 3000 pcs / reel sps yes non dry 4 5 6 1 2 3 p n v ds -30 30 v r ds(on),max v gs =10 v 80 57 m ? v gs =4.5 v 130 93 i d -2.0 2.3 a product summary 3 4 2 rev.2.0 page 1 2009-03-31
BSL308C parameter symbol conditions unit min. typ. max. thermal characteristics p n electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage p v (br)dss v gs =0 v, i d =-250 a - - -30 v n v gs =0 v, i d =250 a 30 - - gate threshold voltage p v gs(th) v ds = v gs , i d =-11a -2 -1.5 -1 n v ds = v gs , i d =11 a 1.2 1.6 2 zero gate voltage drain current p i dss v ds =-30 v, v gs =0 v, t j =25 c - - -1 a n v ds =30 v, v gs =0 v, t j =25 c --1 p v ds =-30 v, v gs =0 v, t j =150 c - - -100 n v ds =30 v, v gs =0 v, t j =150 c - - 100 gate-source leakage current p n p r ds(on) v gs =-4.5 v, i d =-1.7 a - 88 130 m ? n v gs =4.5 v, i d =1.85 a -6793 p v gs =-10 v, i d =-2.0 a -6280 n v gs =10 v, i d =2.3 a -4457 transconductance p g fs | v ds |>2| i d | r ds(on)max , i d =-1.6 a - 4.6 - s n | v ds |>2| i d | r ds(on)max , i d =1.8 a -5- 100 r thja na i gss - v gs =20 v, v ds =0 v - values 2) performed on 40mm 2 fr4 pcb. the traces are 1mm wide, 70 m thick and 20mm long; they are present on both sides of the pcb drain-source on-state resistance thermal resistance, junction - ambient 1) - - 250 minimal footprint 2) k/w rev.2.0 page 2 2009-03-31
BSL308C parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance p c iss - 376 500 pf n - 207 275 output capacitance p c oss - 196 261 n - 75 100 reverse transfer capacitance p c rss -1218 n - 12 17 turn-on delay time p t d(on) - 5.6 - ns n - 4.4 - rise time p t r - 7.7 - n - 2.3 - turn-off delay time p t d(off) - 15.3 - n - 8.3 - fall time p t f - 2.8 - n - 1.4 - gate charge characteristics gate to source charge p q gs - -1.2 - nc gate to drain charge q gd - -0.6 - switching charge q g - -5.0 - gate plateau voltage v plateau - -3.1 - gate to source charge n q gs - 0.65 - gate to drain charge q gd - 0.45 - switching charge q g 1.5 - gate plateau voltage v plateau 3.1 - v dd =15 v, i d =2.3 a, v gs =0 to 10 v values v gs =0 v, p: v ds =-15 v, n: v ds = 15 v, f =1 mhz p: v dd =-15 v, v gs =-10 v, r g =6 ? , i d =-2 a n: v dd =15 v, v gs =10 v, r g =6 ? , i d =2.3 a v dd =-15 v, i d =-2 a, v gs =0 to - 10 v rev.2.0 page 3 2009-03-31
BSL308C parameter symbol conditions unit min. typ. max. reverse diode p i s - - -0.4 a n - - 0.5 diode pulse current p i s,pulse - - -8.4 n--9 diode forward voltage p v sd v gs =0 v, i f =-2 a, t j =25 c - -0.8 -1.1 v n v gs =0 v, i f =2.3 a, t j =25 c - 0.83 1.1 reverse recovery time p t rr -14-ns q rr - -5.9 - nc reverse recovery charge n t rr - 14.4 - ns q rr - 2.9 - nc v r =-15 v, i f =-2a, d i f /d t =-100 a/s v r =15 v, i f =2.3a d i f /d t =100 a/s values t c =25 c diode continuous forward current rev.2.0 page 4 2009-03-31
BSL308C 1 power dissipation (p) 2 power dissipation (n) p tot =f( t a ) p tot =f( t a ) 3 drain current (p) 4 drain current (n) i d =f( t a ) i d =f( t a ) parameter: v gs -10 v parameter: v gs 10 v 0 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 t a [c] p tot [w] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 40 80 120 160 t a [c] i d [a] 0 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 t a [c] p tot [w] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 40 80 120 160 t a [c] -i d [a] rev.2.0 page 5 2009-03-31
BSL308C 5 safe operating area (p) 6 safe operating area (n) i d =f( v ds ); t a =25 c; d =0 i d =f( v ds ); t a =25 c; d =0 parameter: t p parameter: t p 7 max. transient thermal impedance (p) 8 max. transient thermal impedance (n) z thja =f( t p ) z thja =f( t p ) parameter: d = t p / t parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 1 10 0 10 -1 10 -2 10 -3 10 -4 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 3 10 2 10 1 10 0 t p [s] z thja [k/w] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 3 10 2 10 1 10 0 t p [s] z thja [k/w] 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 1 10 0 10 -1 10 -2 10 -3 10 -4 v ds [v] i d [a] rev.2.0 page 6 2009-03-31
BSL308C 9 typ. output characteristics (p) 10 typ. output characteristics (n) i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: v gs parameter: v gs 11 typ. drain-source on resistance (p) 12 typ. drain-source on resistance (n) r ds(on) =f( i d ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 2.8 v 3 v 3.3 v 3.5 v 4 v 4.5 v 10 v 0 1 2 3 4 5 6 0123 v ds [v] i d [a] -2.8 v -3 v -3.3 v -3.5 v -4 v -4.5 v -10 v 0 1 2 3 4 5 6 0123 -v ds [v] -i d [a] 3 v 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 25 50 75 100 125 150 175 200 012345678 i d [a] r ds(on) [m ? ] 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 25 50 75 100 125 150 175 200 012345678 i d [a] r ds(on) [m ? ] rev.2.0 page 7 2009-03-31
BSL308C 13 typ. transfer characteristics (p) 14 typ. transfer characteristics (n) i d =f( v gs ); | v ds |>2 | i d | r ds(on)max i d =f( v gs ); |v ds |>2 | i d | r ds(on)max parameter: t j parameter: t j 15 drain-source on-state resistance (p) 16 drain-source on-state resistance (n) r ds(on) =f( t j ); i d =-2.0 a; v gs =-10 v r ds(on) =f( t j ); i d =2.3 a; v gs =10 v 25 c 150 c 0 1 2 3 4 5 012345 v gs [v] i d [a] 25 c 150 c 0 1 2 3 4 5 012345 -v gs [v] -i d [a] 2% 98% 0 40 80 120 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 2% 98% 0 40 80 120 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] rev.2.0 page 8 2009-03-31
BSL308C 17 typ. gate threshold voltage (p) 18 typ. gate threshold voltage (n) v gs(th) =f( t j ); v gs = v ds ; i d =-11 a v gs(th) =f( t j ); v gs = v ds ; i d =11 a 19 typ. capacitances (p) 20 typ. capacitances (n) c =f( v ds ); v gs =0 v; f =1 mhz c =f( v ds ); v gs =0 v; f =1 mhz ciss coss crss 10 3 10 2 10 1 0102030 -v ds [v] c [pf] ciss coss crss 10 3 10 2 10 1 10 0 0102030 v ds [v] c [pf] typ max min 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 t j [c] -v gs(th) [v] typ min max 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] rev.2.0 page 9 2009-03-31
BSL308C 21 forward characteristics of reverse diode (p) 22 forward characteristics of reverse diode (n) i f =f( v sd ) i f =f( v sd ) parameter: t j parameter: t j 23 avalanche characteristics (p) 24 avalanche characteristics (n) i as =f( t av ); r gs =25 ? i as =f( t av ); r gs =25 ? parameter: t j(start) parameter: t j(start) 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 1 10 0 10 -1 t av [s] -i av [a] 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 1 10 0 10 -1 t av [s] i av [a] 25 c 150 c 25 c, 98% 150 c, 98% 10 1 10 0 10 -1 10 -2 0 0.5 1 1.5 -v sd [v] -i f [a] 25 c 150 c 25 c, 98% 150c, 98% 10 1 10 0 10 -1 10 -2 0 0.5 1 1.5 v sd [v] i f [a] rev.2.0 page 10 2009-03-31
BSL308C 25 typ. gate charge (p) 26 typ. gate charge (n) v gs =f( q gate ); i d =-2.0 a pulsed v gs =f( q gate ); i d =2.3 a pulsed parameter: v dd parameter: v dd 27 drain-source breakdown voltage (p) 28 drain-source breakdown voltage (n) v br(dss) =f( t j ); i d =-250 a v br(dss) =f( t j ); i d =250 a 24 26 28 30 32 34 36 -60 -20 20 60 100 140 180 t j [c] -v br(dss) [v] 24 26 28 30 32 34 36 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] -6 v -15 v -24 v 0 2 4 6 8 10 0123456 -q gate [nc] -v gs [v] 6 v 15 v 24 v 0 2 4 6 8 10 0123456 q gate [nc] v gs [v] rev.2.0 page 11 2009-03-31
BSL308C package outline: footprint: packaging: dimensions in mm tsop-6 gpx09300 1.6 ?.1 ?.1 2.5 ?.1 0.25 1.1 max. 0.1 max. (2.25) +0.1 -0.05 0.35 (0.35) 10 ? max. 10 ? max. 2.9 ?.2 b 0.2 m b 6x 0.95 1.9 a 0.2 a m 0.15 +0.1 -0.06 3 2 1 4 5 6 0.5 0.95 1.9 2.9 hlg09283 remark: wave soldering possible dep. on customers process conditions 2.7 4 3.15 pin 1 marking cpwg5899 8 0.2 1.15 rev.2.0 page 12 2009-03-31
BSL308C published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev.2.0 page 13 2009-03-31

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